Monolithic integration and epitaxial gain control of GaAs-based nanowire lasers on Si

التفاصيل البيبلوغرافية
العنوان: Monolithic integration and epitaxial gain control of GaAs-based nanowire lasers on Si
المؤلفون: Koblmuller, Gregor, Loitsch, Bernhard, Mayer, Benedikt, Stettner, Thomas, Kaniber, Michael, Abstreiter, Gerhard, Finley, Jonathan
المصدر: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016. :1-1 Jun, 2016
Relation: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509019649
DOI:10.1109/ICIPRM.2016.7528618