Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

التفاصيل البيبلوغرافية
العنوان: Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors
المؤلفون: Arikata, Suguru, Kyono, Takashi, Miura, Kouhei, Balasekaran, Sundararajan, Inada, Hiroshi, Iguchi, Yasuhiro, Sakai, Michito, Katayama, Haruyoshi, Kimata, Masafumi, Akita, Katsushi
المصدر: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016. :1-1 Jun, 2016
Relation: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509019649
DOI:10.1109/ICIPRM.2016.7528785