Field-dependent degradation mechanisms in GaN-based HEMTs

التفاصيل البيبلوغرافية
العنوان: Field-dependent degradation mechanisms in GaN-based HEMTs
المؤلفون: Meneghini, M., Meneghesso, G., Rossetto, I., Bartholomeus, J., Rampazzo, F., De Santi, C., Bisi, D., Zanoni, E.
المصدر: 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2016 IEEE 23rd International Symposium on the. :77-80 Jul, 2016
Relation: 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467382595
9781467382588
تدمد:19461550
DOI:10.1109/IPFA.2016.7564252