Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications

التفاصيل البيبلوغرافية
العنوان:	Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications
المؤلفون:	Cho, H.-J., Oh, H.S., Nam, K.J., Kim, Y.H., Yeo, K.H., Kim, W.D., Chung, Y.S., Nam, Y.S., Kim, S.M., Kwon, W.H., Kang, M.J., Kim, I.R., Fukutome, H., Jeong, C.W., Shin, H.J., Kim, Y.S., Kim, D.W., Park, S.H., Jeong, J.H., Kim, S.B., Ha, D.W., Park, J.H., Rhee, H.S., Hyun, S.J., Shin, D.S., Kim, D.H., Kim, H.Y., Maeda, S., Lee, K.H., Kim, M.C., Koh, Y.S., Yoon, B., Shin, K., Lee, N.I., Kangh, S.B., Hwang, K.H., Lee, J.H., Ku, J.-H., Nam, S.W., Jung, S.M., Kang, H.K., Yoon, J.S., Jung, ES
المصدر:	2016 IEEE Symposium on VLSI Technology VLSI Technology, 2016 IEEE Symposium on. :1-2 Jun, 2016
Relation:	2016 IEEE Symposium on VLSI Technology
قاعدة البيانات:	IEEE Xplore Digital Library