S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications

التفاصيل البيبلوغرافية
العنوان: S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications
المؤلفون: Zhang, Wogong, Oehme, Michael, Kostecki, Konrad, Matthies, Klaus, Stefani, Viktor, Raju, Ashraful I., Noll, Daniel, Srinivasan, V.S. Senthil, Korner, Roman, Kasper, Erich, Schulze, Jorg
المصدر: 2016 IEEE MTT-S International Wireless Symposium (IWS) Wireless Symposium (IWS), 2016 IEEE MTT-S International. :1-4 Mar, 2016
Relation: 2016 IEEE MTT-S International Wireless Symposium (IWS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509006960
DOI:10.1109/IEEE-IWS.2016.7585419