Characterization of silicon direct bonding methodology for high performance IGBT

التفاصيل البيبلوغرافية
العنوان: Characterization of silicon direct bonding methodology for high performance IGBT
المؤلفون: Tae Hoon Kim, Chong Man Yun, Soo Seong Kim, Hyung Woo Jang
المصدر: 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on. :185-188 1999
Relation: 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780352904
9780780352902
تدمد:10636854
DOI:10.1109/ISPSD.1999.764093