التفاصيل البيبلوغرافية
| العنوان: |
Suppression of boron penetration in BF/sup 2/+ -implanted poly-Si gate using N/sub 2/O oxide and stacked amorphous-silicon (SAS) structure |
| المؤلفون: |
Chao, T.S., Chu, C.H., Wang, C.F., Ho, K.J., Lei, T.F., Lee, C.L. |
| المصدر: |
International Electron Devices and Materials Symposium Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International. :5-5 1994 |
| Relation: |
International Electron Devices and Materials Symposium |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
