InP/GaAsSb/InP double heterojunction bipolar transistors with high cut-off frequencies and breakdown voltages

التفاصيل البيبلوغرافية
العنوان: InP/GaAsSb/InP double heterojunction bipolar transistors with high cut-off frequencies and breakdown voltages
المؤلفون: Matine, N., Dvorak, M.W., Xu, X.G., Watkins, S.P., Bolognesi, C.R.
المصدر: Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Indium phosphide and related materials Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on. :179-182 1999
Relation: Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780355628
9780780355620
تدمد:10928669
DOI:10.1109/ICIPRM.1999.773663