دورية أكاديمية
Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation
| العنوان: | Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation |
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| المؤلفون: | Rossetto, I., Meneghini, M., Pandey, S., Gajda, M., Hurkx, G.A.M., Croon, J.A., Sonsky, J., Meneghesso, G., Zanoni, E. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 64(1):73-77 Jan, 2017 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2016.2623774 |