Reduction of efficiency droop for InGaN/GaN multiple quantum well light emitting diodes using AlGaN/GaN superlattice structure

التفاصيل البيبلوغرافية
العنوان: Reduction of efficiency droop for InGaN/GaN multiple quantum well light emitting diodes using AlGaN/GaN superlattice structure
المؤلفون: Sheshnag, S, Banik, S K, Mukherjee, S, Saha, M
المصدر: 2016 IEEE 7th Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON) Information Technology, Electronics and Mobile Communication Conference (IEMCON), 2016 IEEE 7th Annual. :1-3 Oct, 2016
Relation: 2016 IEEE 7th Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509009961
DOI:10.1109/IEMCON.2016.7746303