التفاصيل البيبلوغرافية
| العنوان: |
Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer |
| المؤلفون: |
Hirayama, Hideki, Takano, Takayoshi, Sakai, Jun, Mino, Takuya, Tsubaki, Kenji, Maeda, Noritoshi, Jo, Masafumi, Kanazawa, Yuuya, Ohshima, Issei, Matsumoto, Takuma, Kamata, Norihiko |
| المصدر: |
2016 International Semiconductor Laser Conference (ISLC) Semiconductor Laser Conference (ISLC), 2016 International. :1-2 Sep, 2016 |
| Relation: |
2016 International Semiconductor Laser Conference (ISLC) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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