دورية أكاديمية
Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy
| العنوان: | Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy |
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| المؤلفون: | Brinciotti, E., Badino, G., Knaipp, M., Gramse, G., Smoliner, J., Kienberger, F. |
| المصدر: | IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 16(2):245-252 Mar, 2017 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 1536125X 19410085 |
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| DOI: | 10.1109/TNANO.2017.2657888 |