Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

التفاصيل البيبلوغرافية
العنوان:	Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain
المؤلفون:	Barraud, S., Lapras, V., Samson, M.P., Gaben, L., Grenouillet, L., Maffini-Alvaro, V., Morand, Y., Daranlot, J., Rambal, N., Previtalli, B., Reboh, S., Tabone, C., Coquand, R., Augendre, E., Rozeau, O., Hartmann, J. M., Vizioz, C., Arvet, C., Pimenta-Barros, P., Posseme, N., Loup, V., Comboroure, C., Euvrard, C., Balan, V., Tinti, I., Audoit, G., Bernier, N., Cooper, D., Saghi, Z., Allain, F., Toffoli, A., Faynot, O., Vinet, M.
المصدر:	2016 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2016 IEEE International. :17.6.1-17.6.4 Dec, 2016
Relation:	2016 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library