التفاصيل البيبلوغرافية
| العنوان: |
11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology |
| المؤلفون: |
Yamashita, Ryuji, Magia, Sagar, Higuchi, Tsutomu, Yoneya, Kazuhide, Yamamura, Toshio, Mizukoshi, Hiroyuki, Zaitsu, Shingo, Yamashita, Minoru, Toyama, Shunichi, Kamae, Norihiro, Lee, Juan, Chen, Shuo, Tao, Jiawei, Mak, William, Zhang, Xiaohua, Yu, Ying, Utsunomiya, Yuko, Kato, Yosuke, Sakai, Manabu, Matsumoto, Masahide, Chibvongodze, Hardwell, Ookuma, Naoki, Yabe, Hiroki, Taigor, Subodh, Samineni, Rangarao, Kodama, Takuyo, Kamata, Yoshihiko, Namai, Yuzuru, Huynh, Jonathan, Wang, Sung-En, He, Yankang, Pham, Trung, Saraf, Vivek, Petkar, Akshay, Watanabe, Mitsuyuki, Hayashi, Koichiro, Swarnkar, Prashant, Miwa, Hitoshi, Pradhan, Aditya, Dey, Sulagna, Dwibedy, Debasish, Xavier, Thushara, Balaga, Muralikrishna, Agarwal, Samiksha, Kulkarni, Swaroop, Papasaheb, Zameer, Deora, Sahil, Hong, Patrick, Wei, Meiling, Balakrishnan, Gopinath, Ariki, Takuya, Verma, Kapil, Siau, Chang, Dong, Yingda, Lu, Ching-Huang, Miwa, Toru, Moogat, Farookh |
| المصدر: |
2017 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2017 IEEE International. :196-197 Feb, 2017 |
| Relation: |
2017 IEEE International Solid- State Circuits Conference - (ISSCC) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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