Behavioral modeling of drain current of an avalanche ISFET near breakdown

التفاصيل البيبلوغرافية
العنوان: Behavioral modeling of drain current of an avalanche ISFET near breakdown
المؤلفون: Uzzal, Mohammad M, Zarkesh-Ha, Payman, Szauter, Paul, Edwards, Jeremy
المصدر: 2016 29th IEEE International System-on-Chip Conference (SOCC) System-on-Chip Conference (SOCC), 2016 29th IEEE International. :169-173 Sep, 2016
Relation: 2016 29th IEEE International System-on-Chip Conference (SOCC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509013678
9781509013661
تدمد:21641706
DOI:10.1109/SOCC.2016.7905459