مؤتمر
Behavioral modeling of drain current of an avalanche ISFET near breakdown
العنوان: | Behavioral modeling of drain current of an avalanche ISFET near breakdown |
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المؤلفون: | Uzzal, Mohammad M, Zarkesh-Ha, Payman, Szauter, Paul, Edwards, Jeremy |
المصدر: | 2016 29th IEEE International System-on-Chip Conference (SOCC) System-on-Chip Conference (SOCC), 2016 29th IEEE International. :169-173 Sep, 2016 |
Relation: | 2016 29th IEEE International System-on-Chip Conference (SOCC) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781509013678 9781509013661 |
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تدمد: | 21641706 |
DOI: | 10.1109/SOCC.2016.7905459 |