دورية أكاديمية
High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
العنوان: | High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates |
---|---|
المؤلفون: | Muhtadi, S., Hwang, S.M., Coleman, A., Asif, F., Simin, G., Chandrashekhar, M., Khan, A. |
المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 38(7):914-917 Jul, 2017 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 07413106 15580563 |
---|---|
DOI: | 10.1109/LED.2017.2701651 |