دورية أكاديمية
High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
| العنوان: | High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates |
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| المؤلفون: | Muhtadi, S., Hwang, S.M., Coleman, A., Asif, F., Simin, G., Chandrashekhar, M., Khan, A. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 38(7):914-917 Jul, 2017 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2017.2701651 |