Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer

التفاصيل البيبلوغرافية
العنوان: Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer
المؤلفون: Tawara, Takeshi, Miyazawa, Tetsuya, Ryo, Mina, Miyazato, Masaki, Fujimoto, Takumi, Takenaka, Kensuke, Matsunaga, Shinichiro, Miyajima, Masaaki, Otsuki, Akihiro, Yonezawa, Yoshiyuki, Kato, Tomohisa, Okumura, Hajime, Kimoto, Tsunenobu, Tsuchida, Hidekazu
المصدر: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) Silicon Carbide & Related Materials (ECSCRM), European Conference on. :1-1 Sep, 2016
Relation: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9783035730432
DOI:10.4028/www.scientific.net/MSF.897.419