التفاصيل البيبلوغرافية
| العنوان: |
Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier |
| المؤلفون: |
Elahipanah, H., Thierry-Jebali, N., Reshanov, S. A., Kaplan, W., Zhang, A., Lim, J.-K., Bakowski, M., Ostling, M., Schoner, A. |
| المصدر: |
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) Silicon Carbide & Related Materials (ECSCRM), European Conference on. :1-1 Sep, 2016 |
| Relation: |
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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