مؤتمر
1200V SiC Trench-MOSFET optimized for high reliability and high performance
| العنوان: | 1200V SiC Trench-MOSFET optimized for high reliability and high performance |
|---|---|
| المؤلفون: | Peters, D., Aichinger, T., Basler, T., Bergner, W., Kueck, D., Esteve, R. |
| المصدر: | 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) Silicon Carbide & Related Materials (ECSCRM), European Conference on. :1-1 Sep, 2016 |
| Relation: | 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9783035730432 |
|---|---|
| DOI: | 10.4028/www.scientific.net/MSF.897.489 |