Optimizing the Critical Dimension of the STI etch process by integrating inline scatterometry measurements and Feedback R2R control

التفاصيل البيبلوغرافية
العنوان:	Optimizing the Critical Dimension of the STI etch process by integrating inline scatterometry measurements and Feedback R2R control
المؤلفون:	Rizquez, Maria, Roussy, Agnes, Pompier, Dennis, Pinaton, Jacques, Pasquet, Julien
المصدر:	2016 International Symposium on Semiconductor Manufacturing (ISSM) Semiconductor Manufacturing (ISSM), 2016 International Symposium on. :1-4 Dec, 2016
Relation:	2016 International Symposium on Semiconductor Manufacturing (ISSM)
قاعدة البيانات:	IEEE Xplore Digital Library

الوصف
ردمك:	9781509045112
DOI:	10.1109/ISSM.2016.7934534