دورية أكاديمية
Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise
العنوان: | Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise |
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المؤلفون: | Both, T.H., Croon, J.A., Banaszeski da Silva, M., Tuinhout, H.P., Scholten, A.J., Zegers-van Duijnhoven, A., Wirth, G.I. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 64(7):2919-2926 Jul, 2017 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
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DOI: | 10.1109/TED.2017.2703671 |