دورية أكاديمية

Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise

التفاصيل البيبلوغرافية
العنوان: Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise
المؤلفون: Both, T.H., Croon, J.A., Banaszeski da Silva, M., Tuinhout, H.P., Scholten, A.J., Zegers-van Duijnhoven, A., Wirth, G.I.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 64(7):2919-2926 Jul, 2017
قاعدة البيانات: IEEE Xplore Digital Library