دورية أكاديمية
Activation Kinetics of the Boron–oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence
| العنوان: | Activation Kinetics of the Boron–oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence |
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| المؤلفون: | Sun, C., Nguyen, H.T., Sio, H.C., Rougieux, F.E., Macdonald, D. |
| المصدر: | IEEE Journal of Photovoltaics IEEE J. Photovoltaics Photovoltaics, IEEE Journal of. 7(4):988-995 Jul, 2017 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 21563381 21563403 |
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| DOI: | 10.1109/JPHOTOV.2017.2705420 |