Defect formation in SiO2 formed by thermal oxidation of SiC

التفاصيل البيبلوغرافية
العنوان: Defect formation in SiO2 formed by thermal oxidation of SiC
المؤلفون: Chokawa, Kenta, Araidai, Masaaki, Shiraishi, Kenji
المصدر: 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2017 IEEE. :242-243 Feb, 2017
Relation: 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509046607
DOI:10.1109/EDTM.2017.7947582