مؤتمر
Defect formation in SiO2 formed by thermal oxidation of SiC
العنوان: | Defect formation in SiO2 formed by thermal oxidation of SiC |
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المؤلفون: | Chokawa, Kenta, Araidai, Masaaki, Shiraishi, Kenji |
المصدر: | 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2017 IEEE. :242-243 Feb, 2017 |
Relation: | 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781509046607 |
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DOI: | 10.1109/EDTM.2017.7947582 |