Test structures for understanding the impact of ultra-high vacuum metal deposition on top-gate MoS2 field-effect-transistors

التفاصيل البيبلوغرافية
العنوان: Test structures for understanding the impact of ultra-high vacuum metal deposition on top-gate MoS2 field-effect-transistors
المؤلفون: Bolshakov, Pavel, Zhao, Peng, Smyth, Christopher M., Azcatl, Angelica, Wallace, Robert M., Young, Chadwin D., Hurley, Paul K.
المصدر: 2017 International Conference of Microelectronic Test Structures (ICMTS) Microelectronic Test Structures (ICMTS), 2017 International Conference of. :1-4 Mar, 2017
Relation: 2017 International Conference of Microelectronic Test Structures (ICMTS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509036158
تدمد:21581029
DOI:10.1109/ICMTS.2017.7954262