دورية أكاديمية
A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices
العنوان: | A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices |
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المؤلفون: | Iyer, S.S., Solomon, P.M., Kesan, V.P., Bright, A.A., Freeouf, J.L., Nguyen, T.N., Warren, A.C. |
المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 12(5):246-248 May, 1991 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 07413106 15580563 |
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DOI: | 10.1109/55.79571 |