Total ionizing dose effects on CMOS devices in a 110 nm technology

التفاصيل البيبلوغرافية
العنوان: Total ionizing dose effects on CMOS devices in a 110 nm technology
المؤلفون: Riceputi, Elisa, Gaioni, Luigi, Manghisoni, Massimo, Re, Valerio, Dinapoli, Roberto, Mozzanica, Aldo
المصدر: 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Ph.D. Research in Microelectronics and Electronics (PRIME), 2017 13th Conference on. :241-244 Jun, 2017
Relation: 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509065080
9781509065073
DOI:10.1109/PRIME.2017.7974152