مؤتمر
Comparison between gate oxide degradation induced by copper dual damascene and conventional aluminum processes
| العنوان: | Comparison between gate oxide degradation induced by copper dual damascene and conventional aluminum processes |
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| المؤلفون: | Poiroux, T., Heitzmann, M., Morand, Y., Berruyer, P., Turban, G., Reimbold, G. |
| المصدر: | 1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Plasma process-induced damage Plasma Process-Induced Damage, 1999 4th International Symposium on. :177-180 1999 |
| Relation: | 1999 4th International Symposium on Plasma Process-Induced Damage |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0965157733 9780965157735 |
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| DOI: | 10.1109/PPID.1999.798842 |