مؤتمر
Novel integration technology with capacitor over metal (COM) by using self-aligned dual damascene (SADD) process for 0.15 /spl mu/m stand-alone and embedded DRAMs
| العنوان: | Novel integration technology with capacitor over metal (COM) by using self-aligned dual damascene (SADD) process for 0.15 /spl mu/m stand-alone and embedded DRAMs |
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| المؤلفون: | Won Suk Yang, Yeong Kwan Kim, Soo Ho Shin, Won Seok Lee, Kyu Hyun Lee, Hong Sik Jeong, Jong Ho Lee, Tae Young Chung, Heung Soo Park, Sang In Lee, Kinam Kim, Moon Yong Lee, Chang Gyu Hwang |
| المصدر: | 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) VLSI technology VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on. :13-14 1999 |
| Relation: | 1999 Symposium on VLSI Technology. Digest of Technical Papers |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 493081393X 9784930813930 |
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| DOI: | 10.1109/VLSIT.1999.799316 |