مؤتمر
First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications
| العنوان: | First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications |
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| المؤلفون: | Florent, K., Lavizzari, S., Di Piazza, L., Popovici, M., Vecchio, E., Potoms, G., Groeseneken, G., Van IHoudt, J. |
| المصدر: | 2017 Symposium on VLSI Technology VLSI Technology, 2017 Symposium on. :T158-T159 Jun, 2017 |
| Relation: | 2017 Symposium on VLSI Technology |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9784863486058 |
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| تدمد: | 21589682 |
| DOI: | 10.23919/VLSIT.2017.7998162 |