Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation

التفاصيل البيبلوغرافية
العنوان:	Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation
المؤلفون:	Everaert, J-L., Schaekers, M., Yu, H., Wang, L.-L., Hikavyy, A., Date, L., del Agua Borniquel, J., Hollar, K., Khaja, F. A., Aderhold, W., Mayur, A. J., Lee, J. Y., van Meer, H., Jiang, Y.-L., De Meyer, K., Mocuta, D., Horiguchi, N.
المصدر:	2017 Symposium on VLSI Technology VLSI Technology, 2017 Symposium on. :T214-T215 Jun, 2017
Relation:	2017 Symposium on VLSI Technology
قاعدة البيانات:	IEEE Xplore Digital Library