First demonstration of ∼3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack

التفاصيل البيبلوغرافية
العنوان:	First demonstration of ∼3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
المؤلفون:	Sioncke, S., Franco, J., Vais, A., Putcha, V., Nyns, L., Sibaja-Hernandez, A., Rooyackers, R., Ardila, S. Calderon, Spampinato, V., Franquet, A., Maes, J. W., Xie, Q., Givens, M., Tang, F., Jiang, X., Heyns, M., Linten, D., Mitard, J., Thean, A., Mocuta, D., Collaert, N.
المصدر:	2017 Symposium on VLSI Technology VLSI Technology, 2017 Symposium on. :T38-T39 Jun, 2017
Relation:	2017 Symposium on VLSI Technology
قاعدة البيانات:	IEEE Xplore Digital Library