التفاصيل البيبلوغرافية
العنوان: |
Voltage-controlled magnetic tunnel junction based MRAM for replacing high density DRAM circuits corresponding to 2X nm generation |
المؤلفون: |
Ikegami, K., Shiota, Y., Nozaki, T., Abe, K., Noguchi, H., Yuasa, S., Suzuki, Y., Fujita, S. |
المصدر: |
2017 IEEE International Magnetics Conference (INTERMAG) Magnetics Conference (INTERMAG), 2017 IEEE International. :1-2 Apr, 2017 |
Relation: |
2017 IEEE International Magnetics Conference (INTERMAG) |
قاعدة البيانات: |
IEEE Xplore Digital Library |