Voltage-controlled magnetic tunnel junction based MRAM for replacing high density DRAM circuits corresponding to 2X nm generation

التفاصيل البيبلوغرافية
العنوان:	Voltage-controlled magnetic tunnel junction based MRAM for replacing high density DRAM circuits corresponding to 2X nm generation
المؤلفون:	Ikegami, K., Shiota, Y., Nozaki, T., Abe, K., Noguchi, H., Yuasa, S., Suzuki, Y., Fujita, S.
المصدر:	2017 IEEE International Magnetics Conference (INTERMAG) Magnetics Conference (INTERMAG), 2017 IEEE International. :1-2 Apr, 2017
Relation:	2017 IEEE International Magnetics Conference (INTERMAG)
قاعدة البيانات:	IEEE Xplore Digital Library