مؤتمر
A novel high-performance lateral BJT on SOI with metal-backed single-silicon external base for low-power/low-cost RF applications
| العنوان: | A novel high-performance lateral BJT on SOI with metal-backed single-silicon external base for low-power/low-cost RF applications |
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| المؤلفون: | Yamada, T., Nii, H., Inoh, K., Shino, T., Kawanaka, S., Minami, Y., Fuse, T., Yoshimi, Y., Katsumata, Y., Watanabe, S., Matsunaga, J., Ishiuchi, H. |
| المصدر: | Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Bipolar/BiCMOS circuits and technology Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999. :129-132 1999 |
| Relation: | Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780357124 9780780357129 |
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| تدمد: | 10885714 |
| DOI: | 10.1109/BIPOL.1999.803542 |