دورية أكاديمية

MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS

التفاصيل البيبلوغرافية
العنوان: MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS
المؤلفون: Nguyen, X.S., Yadav, S., Lee, K.H., Kohen, D., Kumar, A., Made, R.I., Lee, K.E.K., Chua, S.J., Gong, X., Fitzgerald, E.A.
المصدر: IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 30(4):456-461 Nov, 2017
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:08946507
15582345
DOI:10.1109/TSM.2017.2756684