High temperature VCO based on GaN devices for downhole communications

التفاصيل البيبلوغرافية
العنوان: High temperature VCO based on GaN devices for downhole communications
المؤلفون: Feng, Tianming, Salem, Jebreel M., Ha, Dong Sam
المصدر: 2017 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2017 IEEE International Symposium on. :1-4 May, 2017
Relation: 2017 IEEE International Symposium on Circuits and Systems (ISCAS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467368537
تدمد:2379447X
DOI:10.1109/ISCAS.2017.8050448