Electron mobility in thin In0.53Ga0.47As channel

التفاصيل البيبلوغرافية
العنوان: Electron mobility in thin In0.53Ga0.47As channel
المؤلفون: Cartier, E., Majumdar, A., Lee, K.-T., Ando, T., Frank, M. M., Rozen, J., Jenkins, K. A., Liang, C., Cheng, C.-W., Bruley, J., Hopstaken, M., Kerber, P., Yau, J.-B., Sun, X., Mo, R. T., Yeh, C.-C., Leobandung, E., Narayanan, V.
المصدر: 2017 47th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2017 47th European. :292-295 Sep, 2017
Relation: ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509059782
9781509059775
تدمد:23786558
DOI:10.1109/ESSDERC.2017.8066649