مؤتمر
Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance
العنوان: | Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance |
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المؤلفون: | Rewari, Sonam, Nath, Vandana, Haldar, Subhasis, Deswal, S. S., Gupta, R. S. |
المصدر: | 2017 Devices for Integrated Circuit (DevIC) Devices for Integrated Circuit (DevIC), 2017. :401-406 Mar, 2017 |
Relation: | 2017 Devices for Integrated Circuit (DevIC) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781509047246 |
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DOI: | 10.1109/DEVIC.2017.8073979 |