مؤتمر
Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance
| العنوان: | Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance |
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| المؤلفون: | Rewari, Sonam, Nath, Vandana, Haldar, Subhasis, Deswal, S. S., Gupta, R. S. |
| المصدر: | 2017 Devices for Integrated Circuit (DevIC) Devices for Integrated Circuit (DevIC), 2017. :401-406 Mar, 2017 |
| Relation: | 2017 Devices for Integrated Circuit (DevIC) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781509047246 |
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| DOI: | 10.1109/DEVIC.2017.8073979 |