مؤتمر
TCAD for gate stack optimization in pGaN Gate HEMT devices
العنوان: | TCAD for gate stack optimization in pGaN Gate HEMT devices |
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المؤلفون: | Jaud, M.-A., Baines, Y., Charles, M., Morvan, E., Scheiblin, P., Torres, A., Plissonnier, M., Barbe, J.-C. |
المصدر: | 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2017 International Conference on. :113-116 Sep, 2017 |
Relation: | 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9784863486119 9784863486126 9784863486102 |
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تدمد: | 19461569 19461577 |
DOI: | 10.23919/SISPAD.2017.8085277 |