مؤتمر
TCAD for gate stack optimization in pGaN Gate HEMT devices
| العنوان: | TCAD for gate stack optimization in pGaN Gate HEMT devices |
|---|---|
| المؤلفون: | Jaud, M.-A., Baines, Y., Charles, M., Morvan, E., Scheiblin, P., Torres, A., Plissonnier, M., Barbe, J.-C. |
| المصدر: | 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2017 International Conference on. :113-116 Sep, 2017 |
| Relation: | 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9784863486119 9784863486126 9784863486102 |
|---|---|
| تدمد: | 19461569 19461577 |
| DOI: | 10.23919/SISPAD.2017.8085277 |