Optimization of RF-22nm FDSOI figures of merit with 3D TCAD simulation

التفاصيل البيبلوغرافية
العنوان: Optimization of RF-22nm FDSOI figures of merit with 3D TCAD simulation
المؤلفون: Scheiblin, P., Lacord, J., Lucci, L., Barbe, J.C., Zaka, A., Bazizi, E. M., Herrmann, T., Morvan, S., Pirro, L., Andee, Y., Mazurier, J., Harame, D.
المصدر: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2017 International Conference on. :369-372 Sep, 2017
Relation: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784863486119
9784863486126
9784863486102
تدمد:19461569
19461577
DOI:10.23919/SISPAD.2017.8085341