Suppression of abnormal oxidation of WSi/sub x//P-doped Si stack gate electrode during gate re-oxidation by additional nitrogen ion implantation

التفاصيل البيبلوغرافية
العنوان: Suppression of abnormal oxidation of WSi/sub x//P-doped Si stack gate electrode during gate re-oxidation by additional nitrogen ion implantation
المؤلفون: Hyeon-Soo Kim, Sang-Do Lee, Jeong-Youb Lee, Sang-Moo Lee, Kil-Ho Lee, In-Seok Yee, Sahng-Kyoo Lee
المصدر: 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 1:59-62 vol.1 1999
Relation: 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078034538X
9780780345386
DOI:10.1109/IIT.1999.812051