Innovative GeS2/Sb2Te3 based phase change memory for low power applications

التفاصيل البيبلوغرافية
العنوان: Innovative GeS2/Sb2Te3 based phase change memory for low power applications
المؤلفون: Kluge, Julia, Verdy, Anthonin, Navarro, Gabriele, Blonkowski, Serge, Sousa, Veronique, Chevalliez, Sophie, Kowalczyk, Philippe, Bernard, Mathieu, Bernier, Nicolas, Bourgeois, Guillaume, Castellani, Niccolo, Noe, Pierre, Perniola, Luca
المصدر: 2017 17th Non-Volatile Memory Technology Symposium (NVMTS) Non-Volatile Memory Technology Symposium (NVMTS), 2017 17th. :1-4 Aug, 2017
Relation: 2017 17th Non-Volatile Memory Technology Symposium (NVMTS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781538604779
DOI:10.1109/NVMTS.2017.8171305