دورية أكاديمية
A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique
| العنوان: | A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique |
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| المؤلفون: | Mahapatra, S., Parikh, C.D., Ramgopal Rao, V., Viswanathan, C.R., Vasi, J. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 47(1):171-177 Jan, 2000 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/16.817583 |