CoSi/sub 2/ junction leakage with Ti or TiN capping, and device characteristics in embedded DRAM with stack capacitor

التفاصيل البيبلوغرافية
العنوان: CoSi/sub 2/ junction leakage with Ti or TiN capping, and device characteristics in embedded DRAM with stack capacitor
المؤلفون: Jong-Rim Lee, Soo-Mi Lee, Jong-Chae Kim, Wook-Ha Lee, Won-Suk Yang, Sang-Don Lee
المصدر: ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) VLSI and CAD VLSI and CAD, 1999. ICVC '99. 6th International Conference on. :208-210 1999
Relation: ICVC'99. 6th International Conference on VLSI and CAD
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780357272
9780780357273
DOI:10.1109/ICVC.1999.820878