مؤتمر
MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si
| العنوان: | MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si |
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| المؤلفون: | Wen-Jie Qi, Renee Nieh, Byoung Hun Lee, Laegu Kang, Yongjoo Jeon, Onishi, K., Ngai, T., Banerjee, S., Lee, J.C. |
| المصدر: | International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) Electron devices Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International. :145-148 1999 |
| Relation: | International Electron Devices Meeting 1999. Technical Digest |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780354109 9780780354104 |
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| DOI: | 10.1109/IEDM.1999.823866 |