التفاصيل البيبلوغرافية
| العنوان: |
A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology |
| المؤلفون: |
Maejima, Hiroshi, Kanda, Kazushige, Fujimura, Susumu, Takagiwa, Teruo, Ozawa, Susumu, Sato, Jumpei, Shindo, Yoshihiko, Sato, Manabu, Kanagawa, Naoaki, Musha, Junji, Inoue, Satoshi, Sakurai, Katsuaki, Morozumi, Naohito, Fukuda, Ryo, Shimizu, Yuui, Hashimoto, Toshifumi, Li, Xu, Shimizu, Yuuki, Abe, Kenichi, Yasufuku, Tadashi, Minamoto, Takatoshi, Yoshihara, Hiroshi, Yamashita, Takahiro, Satou, Kazuhiko, Sugimoto, Takahiro, Kono, Fumihiro, Abe, Mitsuhiro, Hashiguchi, Tomoharu, Kojima, Masatsugu, Suematsu, Yasuhiro, Shimizu, Takahiro, Imamoto, Akihiro, Kobayashi, Naoki, Miakashi, Makoto, Yamaguchi, Kouichirou, Bushnaq, Sanad, Haibi, Hicham, Ogawa, Masatsugu, Ochi, Yusuke, Kubota, Kenro, Wakui, Taichi, He, Dong, Wang, Weihan, Minagawa, Hiroe, Nishiuchi, Tomoko, Nguyen, Hao, Kim, Kwang-Ho, Cheah, Ken, Koh, Yee, Lu, Feng, Ramachandra, Venky, Rajendra, Srinivas, Choi, Steve, Payak, Keyur, Raghunathan, Namas, Georgakis, Spiros, Sugawara, Hiroshi, Lee, Seungpil, Futatsuyama, Takuya, Hosono, Koji, Shibata, Noboru, Hisada, Toshiki, Kaneko, Tetsuya, Nakamura, Hiroshi |
| المصدر: |
2018 IEEE International Solid-State Circuits Conference - (ISSCC) Solid-State Circuits Conference - (ISSCC), 2018 IEEE International. :336-338 Feb, 2018 |
| Relation: |
2018 IEEE International Solid-State Circuits Conference - (ISSCC) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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