مؤتمر
On the manifestation of Ge pre-amorphization implantation (PAI) impact on both the formation of ultrathin TiSix and the specific contact resistivity in TiSix/n-Si contacts for sub-16/14 nm nodes and beyond
| العنوان: | On the manifestation of Ge pre-amorphization implantation (PAI) impact on both the formation of ultrathin TiSix and the specific contact resistivity in TiSix/n-Si contacts for sub-16/14 nm nodes and beyond |
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| المؤلفون: | Luo, Jun, Mao, Shujuan, Xu, Jing, Wang, Guilei, Zhang, Dan, Luo, Xue, Duan, Ningyuan, Liu, Shi, Wang, Wenwu, Chen, Dapeng, Li, Junfeng, Zhao, Chao, Ye, Tianchun |
| المصدر: | 2018 18th International Workshop on Junction Technology (IWJT) Junction Technology (IWJT), 2018 18th International Workshop on. :1-1 Mar, 2018 |
| Relation: | 2018 18th International Workshop on Junction Technology (IWJT) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781538645116 9781538645130 9781538645123 |
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| DOI: | 10.1109/IWJT.2018.8330297 |