دورية أكاديمية
Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress
| العنوان: | Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress |
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| المؤلفون: | Ruzzarin, M., Meneghini, M., Barbato, A., Padovan, V., Haeberlen, O., Silvestri, M., Detzel, T., Meneghesso, G., Zanoni, E. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(7):2778-2783 Jul, 2018 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2018.2836460 |