مؤتمر
A 0.4 /spl mu/m 3.3 V 1T1C 4 Mb nonvolatile ferroelectric RAM with fixed bit-line reference voltage scheme and data protection circuit
| العنوان: | A 0.4 /spl mu/m 3.3 V 1T1C 4 Mb nonvolatile ferroelectric RAM with fixed bit-line reference voltage scheme and data protection circuit |
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| المؤلفون: | Byung-Gil Jeon, Mun-Kyu Choi, Yoonjong Song, Seung-Kyu Oh, Yeonbae Chung, Kang-Deog Suh, Kinam Kim |
| المصدر: | 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056) Solid-state circuits Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International. :272-273 2000 |
| Relation: | 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780358538 9780780358539 |
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| تدمد: | 01936530 |
| DOI: | 10.1109/ISSCC.2000.839781 |